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反向散射電子(BSEs)是主電子束與樣品之間的引起相互作用所產生的高能量電子。
- 4 通道半導體型 BSE 探測器
- 清晰的金屬邊界影像
- 比 SE 探測器具有更多的立體影像
- EM 系列和 CX 系列均為選配配置
- 透過數位板輕鬆控制軟體。
- 使用 LV 模式拍攝的無濺鍍試樣清晰影像。
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解析度 10nm 通道 四通道固定型 圖像 形貌和構圖功能,雙顯示幕 -
Backscattered electrons (BSEs) are high-energy electrons generated as a result of elastic interactions between the primary electron beam and the sample.
- 4 Channel Semiconductor Type BSE Detector
- Clear Image about the boundary of metal
- Much Stereoscopic Image than SE detector
- Optional for both of EM Series and CX Series
- Easy controlled S/W by Digital board
- Clear Image of Non-Coating Specimen with LV mode
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Resolution 10nm Channels 4 channels solid type Image Topography and composition functions, Dual display